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QEB373 Subminiature Plastic Infrared Emitting Diode
September 2006
QEB373 Subminiature Plastic Infrared Emitting Diode
Features
T-3/4 (2mm) Surface Mount Package Tape & Reel Option (See Tape & Reel Specifications) Lead Form Options: Gullwing, Yoke, Z-Bend Narrow Emission Angle, 24 Wavelength = 880nm, AlGaAs Clear Lens Matched Photosensor: QSB363 High Radiant Intensity
tm
Package Dimensions
0.276 (7.0) MIN CATHODE
0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) 0.019 (0.5) 0.012 (0.3)
Schematic
.118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) 0.055 (1.4)
0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3)
CATHODE
0.024 (0.6)
Notes: 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified.
(c)2002 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.0
www.fairchildsemi.com
QEB373 Subminiature Plastic Infrared Emitting Diode
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
Symbol
TOPR TSTG TSOL-I TSOL-F IF VR PD Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1)
Parameter
Operating Temperature
Rating
-40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100
Unit
C C C C mA V mW
Notes: 1. Derate power dissipation linearly 1.33mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics (TA = 25C)
Symbol
P VF IR Ie tr tf
Parameter
Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity Rise Time Fall Time
Test Conditions
IF = 100mA IF = 100mA IF = 100mA, tp = 20ms VR = 5V IF = 100mA, tp = 20ms IF = 100mA tp = 20ms
Min.
Typ.
880 12
Max.
Units
nm
1.7 100 16 800 800
V A mW/sr ns ns
(c)2002 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.0
www.fairchildsemi.com 2
QEB373 Subminiature Plastic Infrared Emitting Diode
Typical Performance Curves
Fig. 1 Maximum Forward Current vs. Temperature
200
Fig. 2 Relative Radiant Intensity vs. Wavelength
100
Relative Radiant Intensity (%)
Forward Current IF (mA)
IF = 20 mA TA = 25C
160
80
120
60
80
40
40
20
0 -25
0
25
50
75
85
100
0
880 900 920 940 960 980 1000 1020 1040
Ambient Temperature TA (C)
Wavelength (nm)
Fig. 3 Peak Emission Wavelength vs. Ambient Temperature
Peak Emission Wavelength (nm)
980 500
Fig. 4 Forward Current vs. Forward Voltage
960
Forward Current IF (mA)
0 25 50 75 100
200 100 50 20 10 5 2 1
940
920
900 -25
Ambient Temperature TA (C)
1 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 5 Relative Radiant Flux vs. Ambient Temperature
20 10
Forward Voltage VF (V)
Relative Radiant Flux (%)
Fig. 6 Relative Radiant Intensity vs. Angular Displacement
30 20 10 0 10 20 30
Relative Radiant Intensity
5 2 1
0.5
40 50 60 70 80 90 0.6 0.4 0.2 0 0.2 0.4 0.6
40 50 60 70 80 90
0.2 0.1 -25 0 25 50 75 100
Ambient Temperature TA (C)
Ambient Temperature TA (C)
(c)2002 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.0
www.fairchildsemi.com 3
QEB373 Subminiature Plastic Infrared Emitting Diode
Surface Mount Options for T-3/4 Package
Features
Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes
Gull Wing Lead Configuration
0.166 (4.2)
Yoke Lead Configuration
0.283 (7.2) 0.098 (2.5)
0.016 (0.4)
0.016 (0.4)
0.020 (0.51)
CATHODE 0.087 (2.2) 0.071 (1.8)
0.020 (0.5) 0.074 (1.9)
CATHODE 0.087 (2.2) 0.071 (1.8)
0.074 (1.9)
0.024 (0.6) .118 (3.0) .102 (2.6) 0.078 (2.0) 0.055 (1.4) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) 0.005 (0.13)
0.118 (3.0) 0.102 (2.6) 0.031 (0.8) 0.055 (1.4)
0.051 (1.3) 0.043 (1.1) 0.141 (3.6) 0.008 (0.2)
Z-Bend Lead Configuration
0.236 (6.0) 0.220 (5.6) 0.177 (4.5) 0.161 (4.1) 0.127 (3.25) 0.112 (2.85) 0.016 (0.4) CATHODE 0.087 (2.2) 0.071 (1.8) 0.074 (1.9)
0.020 (0.5)
0.024 (0.6) .118 (3.0) 0.080 (2.0) .102 (2.6) 0.031 (0.8) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) 0.055 (1.4)
Notes: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified.
(c)2002 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.0
www.fairchildsemi.com 4
QEB373 Subminiature Plastic Infrared Emitting Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation QEB373 Rev. 1.0.0
www.fairchildsemi.com 5

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